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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
2SD882S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio amplifier, voltage regulator, DC-DC converter and relay driver.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70)
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 30 5 3 750 +150 -55 to +150 Unit V V V A mW
o o
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380s, Duty Cycle 2%
Min 40 30 5 30 100 -
Typ 90 45
Max 1 1 0.5 2 500 -
Unit V V V A A V V MHz pF
Test Conditions IC=100A IC=1mA IE=10A VCB=30V VEB=3V IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V IE=0, VCB=10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain
(1)
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Classification of hFE2
Rank Range Q 100~200 P 160~320 E 250~500


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